IKW40N120CS7 Stock Supplied by Chengsuchuang
The IKW40N120CS7 is a state-of-the-art, high-performance N-channel MOSFET designed for power switching applications that require excellent efficiency and reliability. Manufactured by Infineon Technologies, this transistor features an advanced trench MOSFET design that ensures low conduction losses, high-speed switching capabilities, and enhanced thermal management. With a maximum drain-source voltage of 1200V and a continuous drain current of 40A, the IKW40N120CS7 is ideal for use in industrial power supplies, motor control systems, and other demanding power electronics applications.
Key Features:
- High Voltage Rating: 1200V drain-source voltage ensures the transistor can handle high-voltage systems with ease.
- Low R_DS(on): The device’s low on-state resistance minimizes power losses and improves efficiency.
- High Switching Speed: Optimized for fast switching, reducing overall system losses in high-frequency applications.
- Robust Thermal Performance: Designed to operate in harsh environments with advanced thermal management to prevent overheating.
- Efficient Power Handling: Capable of withstanding high power dissipation, making it suitable for demanding power electronics tasks.
This MOSFET is especially suitable for applications such as AC-DC power supplies, DC-DC converters, solar inverters, and industrial motor drivers, where high power density, efficiency, and thermal stability are crucial for optimal performance and long-term reliability.
The IKW40N120CS7 is an excellent choice for engineers seeking a robust, efficient, and cost-effective solution for their high-voltage power switching needs.
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